Mobile Semiconductor’s silicon-proven, optimized embedded SRAM technology offers SMIC 40nm, 65nm and 90nm low power process, single-port SRAM solutions in a range of architectures:
ultra high speed (UHS)
high density (HD)
Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while keeping die size small.
Single-port ultra-high speed (UHS) memories use low VT and standard VT devices to optimize the critical path and enhance performance while limiting static current.
Single-port high density (HD) memories use standard VT and high VT devices to optimize the critical path and enhance performance while limiting static current.
SMIC 40nm LL, SMIC 65nm LL, SMIC 90nm LL
Mobile Semiconductor’s optimized SMIC LL-process embedded single-port SRAM solutions are offered in ultra high speed (UHS) and high density (HD) architectures.
In order to ensure high manufacturing yield, the Trailblaze™ software utilizes SMIC’s standard high density 6T bit cells and is consistent with SMIC’s Design for Manufacturing (DFM) guidelines for the LL processes.
Mobile Semiconductor Optimized SMIC LL Architecture
40nm Single-Port, Ultra High Speed
65nm Single-Port, High Speed
65nm Single-Port, High Density
90nm Single-Port, High Density
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