Ultra Low Voltage (ULV) SRAM
Mobile Semi delivers optimized, embedded SRAM solutions that are designed for the lowest operating voltages and lowest standby currents available in the marketplace. Fully functional embedded SRAMs and ROMs that operate at minimal power and have ultra-low power standby capabilities extend useful battery lives of end products. Our technology enables our customers to benefit from a significant reduction in standby current using standard foundry provided SRAM bit cells in 22nm FDX, 28nm, 40nm, and 55nm technologies. Mobile Semi has been developing and silicon testing low voltage memories since 2011. These silicon proven memories are ideal for the Internet of Things (IoT) market.
Offering 28nm, 40nm, and 55nm Silicon Proven solutions operating below 0.8V with 50MHz+ performance and 1.1V with 1.5GHz performance, Mobile Semi’s proprietary, silicon-proven design and layout techniques maximize performance and keep die sizes small. Innovative design techniques enable a wider range of Dynamic Voltage Scaling (DVS) and dynamic voltage and frequency scaling (DVFS) for minimal power consumption.
Mobile Semi’s optimized solutions are designed with the industry’s leading experience in bit cell stability and statistical analysis for yield and leakage. High Threshold Voltage (HVT) devices are used to minimize leakage currents with limited standard VT devices used when required.
Robust, low voltage latches are used throughout designs to ensure soft error immunity. Mobile Semi’s optimized, embedded SRAM solutions don’t require multiple voltages or custom bit cells. With silicon-proven solutions, Mobile Semi is the industry’s leader in optimized, low voltage embedded SRAM design.
Ultra High Speed (UHS) SRAM
Mobile Semi delivers optimized, embedded SRAM solutions that are designed for the highest operating speeds available in the marketplace while keeping die sizes small. Proprietary silicon-proven design and layout techniques are applied to achieve high performance architectures in low power processes.
The production-proven Trailblaze™ software generates a range of embedded SRAM sizes with performance of up to 2GHz. Low VT and standard VT devices are used to optimize the critical path, enhancing performance while limiting static current.
Mobile Semi’s optimized solutions are designed with the industry’s leading experience in robust sense amp design as well as designs that achieve the best statistical timing analysis for yield. Additionally, robust, low voltage latches are used throughout designs to ensure soft error immunity.
When the SRAM is in the critical path or the design’s high clock rate requires a best-in-class embedded SRAM, the Trailblaze™ software leverages high speed foundry bit cells to produce instances optimized for faster access times and minimum setup times. Mobile Semi’s silicon-proven solutions provide the industry’s best optimized, high speed embedded SRAM designs.
Multi-Megabit (MM) SRAM Macros
Mobile Semi’s multi-megabit macro compiler generates memory macros using our high density SRAM instances. Our proprietary silicon-proven design and layout techniques achieve the highest SRAM block densities for your designs. Mobile Semi’s multi-megabit macro compilers generate L-shaped or rectangular shaped footprints for flexibility in SOC floor-planning.
To maximize the yield, the SRAM macro compiler provides redundancy in each memory sub-array. Mobile Semi’s multi-megabit macro compilers eliminate the need for iterative synthesis, place-and-route experimentation and aspect ratio analysis, resulting in quick, high-density multi-megabit SRAM macro-block instantiations.
